Microstructure development in (Co,Ta)-doped SnO2-based ceramics with promising varistor and dielectric properties

Metal Oxide ZnO-Based Varistor Ceramics

Microstructure and Nonohmic Properties of SnO2-Ta2O5-ZnO System Doped with ZrO2

The microstructure and nonohmic properties of SnO₂-Ta₂O₅-ZnO varistor system doped with different amounts of ZrO₂ (0-2.0 mol%) were investigated. The proposed samples were sintered at 1400°C for 2 h with conventional ceramic processing method. By X-ray diffraction, SnO₂ cassiterite phase was found in all the samples, and no extra phases were identified in the detection limit. The doping of ZrO₂...

Effect of Microwave Sintering on the Microstructure and Dielectric Properties of Bi2O3-Doped (Ba0.6Sr0.4)(Ti0.94Cu0.06)O3 Ceramics

The effects of microwave sintering on the sintering behaviour, microstructure and dielectric properties of Bi2O3doped (Ba0.6Sr0.4)(Ti0.94Cu0.06)O3 (BSTC) ceramics were investigated. The microstructure and dielectric properties of a BSTC ceramic were also studied given different amounts of Bi2O3 doping. Microwave heating with sintering temperatures below 1000 ̊C significantly improves the densifi...

Influence of Adding SiC on Microstructure and Electrical Properties of ZnO-based Nanocomposite Varistor

In this research the influence of adding SiC on microstructure and electrical properties of ZnO-based Nanocomposite varistors were investigated. SiC was added with amounts of 10-0 mass% to ZnO-based varistor composition. It is found that SiC allows reaching to high threshold voltage with formation of fine-graine...

Nb-Doped 0.8BaTiO3-0.2Bi(Mg0.5Ti0.5)O3 Ceramics with Stable Dielectric Properties at High Temperature

Nb-doped 0.8BaTiO3-0.2Bi(Mg0.5Ti0.5)O3 ceramics were prepared by conventional solid-state method. The dielectric properties and the structural properties were investigated. When Nb2O5 is doped into 0.8BT-0.2BMT system, a small amount of Ba4Ti12O27 secondary phase is formed. The lattice parameters gradually increase with the Nb2O5 doping. It is found that the temperature-capacitance characterist...